| US 7,586,117 B2 | ||
| Field effect transistor and method of producing same | ||
| Akane Masumoto, Yokohama (Japan); Daisuke Miura, Numazu (Japan); and Tomonari Nakayama, Yokohama (Japan) | ||
| Assigned to Canon Kabushiki Kaisha, Tokyo (Japan) | ||
| Appl. No. 10/583,126 PCT Filed Mar. 16, 2005, PCT No. PCT/JP2005/005306 § 371(c)(1), (2), (4) Date Jun. 16, 2006, PCT Pub. No. WO2005/091394, PCT Pub. Date Sep. 29, 2005. |
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| Claims priority of application No. 2004-087077 (JP), filed on Mar. 24, 2004. | ||
| Prior Publication US 2008/0277649 A1, Nov. 13, 2008 | ||
| Int. Cl. H01L 51/30 (2006.01); H01L 51/40 (2006.01); C07D 487/22 (2006.01) | ||
| U.S. Cl. 257—40 [257/E51.041; 438/99; 540/145] | 2 Claims |
1. A field effect transistor comprising an organic semiconductor layer comprising a compound having a monobenzoporphyrin skeleton
obtained by heating a metal-free monobicycloporphyrin compound represented by the general formula (3):
 |