| US 7,585,749 B2 | ||
| Methods of forming a layer of material on a substrate and structures formed therefrom | ||
| Xavier Hebras, Grenoble (France) | ||
| Assigned to S.O.I.Tec Silicon on Insulator Technologies, Bernin (France) | ||
| Filed on Aug. 14, 2006, as Appl. No. 11/504,256. | ||
| Claims priority of application No. 06 02178 (FR), filed on Mar. 13, 2006. | ||
| Prior Publication US 2007/0210307 A1, Sep. 13, 2007 | ||
| Int. Cl. H01L 21/30 (2006.01); H01L 21/00 (2006.01); H01L 21/04 (2006.01) | ||
| U.S. Cl. 438—458 [438/482; 438/510; 257/E21.567] | 20 Claims |
| 1. A method for making a structure that includes at least one layer on a supporting substrate which comprises:
forming an intermediate substrate, wherein the intermediate substrate has an upper face, an upper portion and a lower portion,
and comprises an amorphous layer and a first crystalline layer containing end of range point defects subjacent the amorphous
layer and located in the lower portion of the intermediate substrate;
bonding a supporting substrate to the upper face of the intermediate substrate to form a bonded structure; and
removing the first crystalline layer of the intermediate substrate so that the amorphous layer forms an upper layer of the
bonded structure and does not contain end of range point defects.
|