| US 7,585,706 B2 | ||
| Method of fabricating a semiconductor device | ||
| Katsunori Nishii, Osaka (Japan); Kaoru Inoue, Shiga (Japan); Toshinobu Matsuno, Kyoto (Japan); Yoshito Ikeda, Osaka (Japan); and Hiroyuki Masato, Osaka (Japan) | ||
| Assigned to Panasonic Corporation, Osaka (Japan) | ||
| Filed on Sep. 18, 2007, as Appl. No. 11/898,951. | ||
| Application 11/898951 is a division of application No. 09/813304, filed on Mar. 21, 2001, granted, now 7,285,806. | ||
| Claims priority of application No. 2000-080242 (JP), filed on Mar. 22, 2000. | ||
| Prior Publication US 2008/0038856 A1, Feb. 14, 2008 | ||
| Int. Cl. H01L 21/336 (2006.01) | ||
| U.S. Cl. 438—142 [438/172; 438/180; 438/197; 438/585; 257/192; 257/194; 257/195; 257/197; 257/198; 257/E21.407; 257/E21.452; 257/E29.091] | 16 Claims |
| 15. A method of fabricating a semiconductor device comprising:
a laser structure forming step of forming, on a substrate, a laser structure having a cavity and including a plurality of
group III nitride semiconductor layers by forming said plurality of group III nitride semiconductor layers;
a step of exposing facets of said cavity of said laser structure; and
an oxide film forming step of forming a protection oxide film on said facets by oxidizing side faces of said laser structure
including said facets.
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