| US 7,585,683 B2 | ||
| Methods of fabricating ferroelectric devices | ||
| Dong-Hyun Im, Gyeonggi-do (Korea, Republic of); Byoung-Jae Bae, Gyeonggi-do (Korea, Republic of); Ik-Soo Kim, Gyeonggi-do (Korea, Republic of); Jang-Eun Heo, Seoul (Korea, Republic of); Choong-Man Lee, Seoul (Korea, Republic of); and Dong-Chul Yoo, Gyeonggi-do (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., (Korea, Republic of) | ||
| Filed on Jul. 17, 2007, as Appl. No. 11/778,880. | ||
| Claims priority of application No. 10-2006-0066770 (KR), filed on Jul. 18, 2006. | ||
| Prior Publication US 2008/0020489 A1, Jan. 24, 2008 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—3 [438/513; 438/681; 257/E21.17; 257/E21.253; 257/E21.304; 257/E21.311; 257/E21.321] | 23 Claims |
| 1. A method of fabricating a ferroelectric device, comprising:
providing a carrier gas and at least one of an oxygen-containing gas and a first inactive gas into a reaction chamber to form
a ferroelectric layer on a substrate in the reaction chamber; and
providing a second inactive gas to the ferroelectric layer while unloading the substrate from the reaction chamber,
wherein the second inactive gas substantially inhibits remaining gases in the reaction chamber from forming an impurity layer
on the ferroelectric layer.
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