| US 7,585,480 B2 | ||
| Highly pure ultra-fine SiOx powder and method for production thereof | ||
| Yasuo Imamura, Tokyo (Japan); and Ryozo Nonogaki, Tokyo (Japan) | ||
| Assigned to Denki Kagaku Kogyo Kabushiki Kaisha, Tokyo (Japan) | ||
| Appl. No. 10/500,737 PCT Filed Jan. 10, 2003, PCT No. PCT/JP03/00158 § 371(c)(1), (2), (4) Date Jul. 06, 2004, PCT Pub. No. WO03/059816, PCT Pub. Date Jul. 24, 2003. |
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| Claims priority of application No. 2002-003226 (JP), filed on Jan. 10, 2002. | ||
| Prior Publication US 2005/0084439 A1, Apr. 21, 2005 | ||
| Int. Cl. C01B 33/113 (2006.01) | ||
| U.S. Cl. 423—325 [423/324; 423/335; 423/336; 423/337] | 11 Claims |
| 1. A method for producing a powder represented by the formula SiOx comprising:
reacting monosilane gas, SiH4,with a gas containing oxygen capable of oxidizing the monosilane gas in the presence of a non-oxidizing gas, under a pressure
of from 10 to 1000 kPa at a high temperature of from 500 to 1000° C. in a reaction zone to produce SiOx powder,
wherein
x is from 0.6 to 1.8,
the SiOxpowder has a specific surface area of at least 10 m2/g and a total
content of Na, Fe, Al and Cl of at most 10 ppm, and
the gas capable of oxidizing the monosilane gas is supplied to the reaction zone without prior mixing with the monosilane
gas, and the high temperature in the reaction zone is obtained by heating the reaction zone on its periphery.
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