CPC H10N 50/10 (2023.02) [G11C 11/161 (2013.01); H10N 50/80 (2023.02); H10N 50/85 (2023.02); H10B 61/00 (2023.02)] | 20 Claims |
1. A method of fabricating a synthetic anti-ferromagnetic (SAF) structure in a magnetic tunnel junction (MTJ) stack, comprising:
forming a free magnetic layer; and
forming a fixed magnetic region with a unpinned synthetic anti-ferromagnetic (SAF) structure, wherein forming the fixed magnetic region includes:
forming a first ferromagnetic layer, wherein the first ferromagnetic layer comprises cobalt, iron, and boron;
forming a second ferromagnetic layer, wherein the second ferromagnetic layer comprises cobalt, iron, and boron;
forming a coupling layer between the first ferromagnetic layer and the second ferromagnetic layer; and
forming a ferromagnetic insertion layer between the first ferromagnetic layer and the coupling layer.
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