US 11,744,161 B2
Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferromagnetic structure and methods of manufacturing thereof
Srinivas V. Pietambaram, Gilbert, AZ (US); Bengt J. Akerman, Sollentuna (SE); Renu Whig, Chandler, AZ (US); Jason A. Janesky, Gilbert, AZ (US); Nicholas D. Rizzo, Gilbert, AZ (US); and Jon M. Slaughter, Slingerlands, NY (US)
Assigned to Everspin Technologies, Inc., Chandler, AZ (US)
Filed by Everspin Technologies, Inc., Chandler, AZ (US)
Filed on Dec. 14, 2020, as Appl. No. 17/120,959.
Application 15/199,862 is a division of application No. 14/727,910, filed on Jun. 2, 2015, granted, now 9,391,264, issued on Jul. 12, 2016.
Application 14/727,910 is a division of application No. 14/303,200, filed on Jun. 12, 2014, granted, now 9,093,637, issued on Jul. 28, 2015.
Application 14/303,200 is a division of application No. 13/925,590, filed on Jun. 24, 2013, granted, now 8,754,460, issued on Jun. 17, 2014.
Application 13/925,590 is a division of application No. 11/444,089, filed on May 31, 2006, granted, now 8,497,538, issued on Jul. 30, 2013.
Application 17/120,959 is a continuation of application No. 16/890,215, filed on Jun. 2, 2020, granted, now 10,897,008.
Application 16/890,215 is a continuation of application No. 16/225,670, filed on Dec. 19, 2018, granted, now 10,707,410, issued on Jul. 7, 2020.
Application 16/225,670 is a continuation of application No. 15/722,191, filed on Oct. 2, 2017, granted, now 10,199,571, issued on Feb. 5, 2019.
Application 15/722,191 is a continuation of application No. 15/199,862, filed on Jun. 30, 2016, granted, now 9,793,468, issued on Oct. 17, 2017.
Prior Publication US 2021/0135096 A1, May 6, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01)
CPC H10N 50/10 (2023.02) [G11C 11/161 (2013.01); H10N 50/80 (2023.02); H10N 50/85 (2023.02); H10B 61/00 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of fabricating a synthetic anti-ferromagnetic (SAF) structure in a magnetic tunnel junction (MTJ) stack, comprising:
forming a free magnetic layer; and
forming a fixed magnetic region with a unpinned synthetic anti-ferromagnetic (SAF) structure, wherein forming the fixed magnetic region includes:
forming a first ferromagnetic layer, wherein the first ferromagnetic layer comprises cobalt, iron, and boron;
forming a second ferromagnetic layer, wherein the second ferromagnetic layer comprises cobalt, iron, and boron;
forming a coupling layer between the first ferromagnetic layer and the second ferromagnetic layer; and
forming a ferromagnetic insertion layer between the first ferromagnetic layer and the coupling layer.