US 11,744,111 B2
Display device
Satoshi Maruyama, Minato-ku (JP)
Assigned to Japan Display Inc., Tokyo (JP)
Filed by Japan Display Inc., Tokyo (JP)
Filed on Jun. 14, 2022, as Appl. No. 17/839,864.
Application 17/109,369 is a division of application No. 16/263,635, filed on Jan. 31, 2019, granted, now 10,886,351, issued on Jan. 5, 2021.
Application 17/839,864 is a continuation of application No. 17/109,369, filed on Dec. 2, 2020, granted, now 11,404,516.
Application 16/263,635 is a continuation of application No. 15/426,606, filed on Feb. 7, 2017, granted, now 10,236,330, issued on Mar. 19, 2019.
Claims priority of application No. 2016-058455 (JP), filed on Mar. 23, 2016.
Prior Publication US 2022/0310735 A1, Sep. 29, 2022
Int. Cl. H01L 27/00 (2006.01); H10K 59/121 (2023.01); H01L 27/12 (2006.01); H10K 59/131 (2023.01); H01L 27/06 (2006.01); H10K 59/12 (2023.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H10K 59/1213 (2023.02) [H01L 27/1225 (2013.01); H01L 27/1251 (2013.01); H01L 27/1255 (2013.01); H01L 27/1259 (2013.01); H10K 59/1216 (2023.02); H10K 59/131 (2023.02); H01L 27/0688 (2013.01); H01L 27/124 (2013.01); H01L 27/1222 (2013.01); H01L 27/1262 (2013.01); H01L 29/66757 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78675 (2013.01); H10K 59/1201 (2023.02)] 5 Claims
OG exemplary drawing
 
1. A display device comprising:
a pixel electrode that is provided in a display region configured to display an image;
a common electrode that is disposed above the pixel electrode;
a light-emitting element layer that is interposed between the pixel electrode and the common electrode;
a first thin film transistor including a first gate electrode coupled to the pixel electrode in the display region, no other transistor being coupled between the first thin film transistor and the pixel electrode;
a first conductive layer that is provided under and overlaps with the first thin film transistor;
a circuit layer that is provided in a peripheral region outside the display region; and
a second thin film transistor including a second gate electrode in the circuit layer,
wherein a first channel of the first thin film transistor is made of an oxide semiconductor, and the second thin film transistor is positioned at a lower layer in comparison with the first thin film transistor, and the second gate electrode is in the same layer as the first conductive layer.