US 11,744,110 B2
Display apparatus and method of manufacturing the same
Jongjun Baek, Yongin-si (KR); Jaewoo Jeong, Yongin-si (KR); and Byungsoo So, Yongin-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed by Samsung Display Co., Ltd., Yongin-si (KR)
Filed on May 11, 2021, as Appl. No. 17/317,304.
Application 17/317,304 is a division of application No. 16/535,336, filed on Aug. 8, 2019, granted, now 11,024,689.
Claims priority of application No. 10-2018-0132563 (KR), filed on Oct. 31, 2018.
Prior Publication US 2021/0265440 A1, Aug. 26, 2021
Int. Cl. H10K 59/121 (2023.01); H01L 29/16 (2006.01); H01L 29/04 (2006.01); H01L 29/786 (2006.01); H10K 50/12 (2023.01); H10K 50/165 (2023.01); H10K 59/123 (2023.01); H10K 71/00 (2023.01)
CPC H10K 59/1213 (2023.02) [H01L 29/045 (2013.01); H01L 29/1604 (2013.01); H01L 29/78675 (2013.01); H10K 50/12 (2023.02); H10K 50/165 (2023.02); H10K 59/123 (2023.02); H10K 71/00 (2023.02)] 13 Claims
OG exemplary drawing
 
1. A display apparatus, comprising:
a substrate;
a first thin film transistor on the substrate, the first thin film transistor including an active layer including a source region, a drain region, and a channel region between the source region and the drain region; and
a display device on the substrate and electrically connected to the first thin film transistor, wherein
the source region, the drain region, and the channel region include a first dopant and a second dopant, the second dopant being different from the first dopant, and
a concentration of the first dopant in the channel region is less than a concentration of the first dopant in the source region and the drain region.