	US 11,744,094 B2
	Quantum-dot light emitting diode, method of fabricating the quantum-dot light emitting diode and quantum-dot light emitting display device
Kyu-Nam Kim, Paju-si (KR); Duk-Young Jeon, Paju-si (KR); Hyun-Jin Cho, Paju-si (KR); and Sun-Joong Park, Paju-si (KR)
Assigned to LG Display Co., Ltd., Seoul (KR); and Korea Advanced Institute of Science and Technology, Daejeon (KR)
Filed by LG DISPLAY CO., LTD., Seoul (KR); and Korea Advanced Institute of Science and Technology, Daejeon (KR)
Filed on Jul. 28, 2022, as Appl. No. 17/876,447.
Application 17/876,447 is a division of application No. 16/909,912, filed on Jun. 23, 2020, granted, now 11,417,850.
Claims priority of application No. 10-2019-0074869 (KR), filed on Jun. 24, 2019.
Prior Publication US 2022/0376200 A1, Nov. 24, 2022
Int. Cl. H01L 51/50 (2006.01); H10K 50/11 (2023.01); H10K 50/15 (2023.01); H10K 50/17 (2023.01); H10K 50/115 (2023.01); H10K 71/00 (2023.01); H10K 85/10 (2023.01); H10K 59/12 (2023.01); H10K 85/60 (2023.01); H10K 101/40 (2023.01); H10K 101/30 (2023.01)

CPC H10K 50/11 (2023.02) [H10K 50/115 (2023.02); H10K 50/15 (2023.02); H10K 50/17 (2023.02); H10K 71/00 (2023.02); H10K 85/114 (2023.02); H10K 59/12 (2023.02); H10K 59/1201 (2023.02); H10K 85/115 (2023.02); H10K 85/146 (2023.02); H10K 85/151 (2023.02); H10K 85/631 (2023.02); H10K 85/636 (2023.02); H10K 85/6572 (2023.02); H10K 2101/30 (2023.02); H10K 2101/40 (2023.02)]

10 Claims

1. A method of fabricating a QD light emitting diode, comprising:

forming a first electrode;

forming a hole auxiliary layer of a hole auxiliary material on the first electrode;

forming a QD emitting material layer on the hole auxiliary layer by coating an emitting material solution, wherein the emitting material solution includes a QD, an organic material and a solvent;

forming an electron auxiliary layer on the QD emitting material layer; and

forming a second electrode on the electron auxiliary layer,

wherein the organic material has a HOMO level higher than the hole auxiliary material.