US 11,742,447 B2
Photovoltaic module, solar cell, and method for producing solar cell
Jie Yang, Shanghai (CN); Wenqi Li, Shanghai (CN); Xueting Yuan, Shanghai (CN); Xinyu Zhang, Shanghai (CN); and Hao Jin, Shanghai (CN)
Assigned to JINKO GREEN ENERGY (SHANGHAI) MANAGEMENT CO., LTD, Shanghai (CN); and ZHEJIANG JINKO SOLAR CO., LTD, Zhejiang (CN)
Filed by JINKO GREEN ENERGY (SHANGHAI) MANAGEMENT CO., LTD, Shanghai (CN); and ZHEJIANG JINKO SOLAR CO., LTD, Zhejiang (CN)
Filed on Mar. 10, 2021, as Appl. No. 17/197,912.
Application 17/197,912 is a continuation of application No. 16/901,143, filed on Jun. 15, 2020, granted, now 10,991,838.
Claims priority of application No. 202010477787.6 (CN), filed on May 29, 2020.
Prior Publication US 2021/0376176 A1, Dec. 2, 2021
Int. Cl. H01L 31/054 (2014.01); H01L 31/048 (2014.01); H01L 31/18 (2006.01)
CPC H01L 31/0543 (2014.12) [H01L 31/0481 (2013.01); H01L 31/1868 (2013.01); Y02E 10/50 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A solar cell, comprising:
a semiconductor layer having a resistivity ranging from 0.5 Ω·cm to 3.5 Ω·cm;
a diffusion layer formed on a front surface of the semiconductor layer, wherein the diffusion layer and the semiconductor layer form a PN junction;
a front passivation layer formed on the diffusion layer; and
a passivation film stack provided on a back surface of the semiconductor layer,
wherein the passivation film stack comprises at least one silicon oxynitride film layer and at least one silicon nitride film, a sum of thicknesses of layers of the passivation film stack is in a range from 160 nm to 260 nm, the at least one silicon oxynitride film layer has a thickness ranging from 90 nm to 150 nm, and the at least one silicon oxynitride film layer includes a silicon-rich silicon oxynitride film having a silicon atom concentration ranging from 5×1021/cm3 to 2.5×1022/cm3.