US 11,742,415 B2
Fin-like field effect transistor patterning methods for achieving fin width uniformity
Kuo-Cheng Ching, Hsinchu County (TW); Shi Ning Ju, Hsinchu (TW); Kuan-Lun Cheng, Hsin-Chu (TW); and Chih-Hao Wang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Feb. 17, 2021, as Appl. No. 17/178,006.
Application 17/178,006 is a division of application No. 16/387,889, filed on Apr. 18, 2019, granted, now 10,930,767.
Claims priority of provisional application 62/698,536, filed on Jul. 16, 2018.
Prior Publication US 2021/0175341 A1, Jun. 10, 2021
Int. Cl. H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 21/308 (2006.01)
CPC H01L 29/6681 (2013.01) [H01L 21/3086 (2013.01); H01L 21/76224 (2013.01); H01L 27/0886 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a fin-like field effect transistor (FinFET) device having:
a fin structure that includes a dielectric fin and a semiconductor fin extending along a first direction, wherein the dielectric fin is disposed adjacent to the semiconductor fin, and further wherein a first width of the dielectric fin is the same as a second width of the semiconductor fin;
an isolation feature disposed between the dielectric fin and the semiconductor fin, wherein the dielectric fin includes a first dielectric material and the isolation feature includes a second dielectric material that is different than the first dielectric material; and
a gate structure disposed over a portion of the dielectric fin and a portion of the semiconductor fin, wherein the gate structure extends along a second direction that is perpendicular to the first direction.