CPC H01L 29/0834 (2013.01) [H01L 21/26513 (2013.01); H01L 21/3221 (2013.01); H01L 29/0638 (2013.01); H01L 29/1095 (2013.01); H01L 29/66333 (2013.01); H01L 29/7395 (2013.01)] | 14 Claims |
1. A vertical power semiconductor device, comprising:
a semiconductor body having a first main surface and a second main surface opposite to the first main surface along a vertical direction;
a drift region in the semiconductor body, the drift region including platinum atoms;
a field stop region in the semiconductor body between the drift region and the second main surface, the field stop region including a plurality of impurity peaks,
wherein a first impurity peak of the plurality of impurity peaks has a larger concentration than a second impurity peak of the plurality of impurity peaks,
wherein the first impurity peak includes hydrogen and the second impurity peak includes helium,
wherein a third impurity peak of the plurality of impurity peaks is disposed at a third vertical distance from the second main surface that differs from 0 to 300 nm from a second vertical distance of the second impurity peak with respect to the second main surface, and wherein the third impurity peak includes hydrogen, and
wherein a fourth impurity peak of the plurality of impurity peaks includes helium and is disposed at a fourth vertical distance from the second main surface, and wherein the third vertical distance ranges between the second vertical distance and the fourth vertical distance.
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