US 11,742,384 B2
Vertical power semiconductor device including a field stop region having a plurality of impurity peaks
Hans-Joachim Schulze, Taufkirchen (DE); Christian Jaeger, Munich (DE); Moriz Jelinek, Villach (AT); Daniel Schloegl, Villach (AT); and Benedikt Stoib, Feldkirchen-Westerham (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Mar. 30, 2021, as Appl. No. 17/217,251.
Claims priority of application No. 102020110072.8 (DE), filed on Apr. 9, 2020.
Prior Publication US 2021/0320174 A1, Oct. 14, 2021
Int. Cl. H01L 29/08 (2006.01); H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 21/322 (2006.01); H01L 29/10 (2006.01)
CPC H01L 29/0834 (2013.01) [H01L 21/26513 (2013.01); H01L 21/3221 (2013.01); H01L 29/0638 (2013.01); H01L 29/1095 (2013.01); H01L 29/66333 (2013.01); H01L 29/7395 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A vertical power semiconductor device, comprising:
a semiconductor body having a first main surface and a second main surface opposite to the first main surface along a vertical direction;
a drift region in the semiconductor body, the drift region including platinum atoms;
a field stop region in the semiconductor body between the drift region and the second main surface, the field stop region including a plurality of impurity peaks,
wherein a first impurity peak of the plurality of impurity peaks has a larger concentration than a second impurity peak of the plurality of impurity peaks,
wherein the first impurity peak includes hydrogen and the second impurity peak includes helium,
wherein a third impurity peak of the plurality of impurity peaks is disposed at a third vertical distance from the second main surface that differs from 0 to 300 nm from a second vertical distance of the second impurity peak with respect to the second main surface, and wherein the third impurity peak includes hydrogen, and
wherein a fourth impurity peak of the plurality of impurity peaks includes helium and is disposed at a fourth vertical distance from the second main surface, and wherein the third vertical distance ranges between the second vertical distance and the fourth vertical distance.