CPC H01L 23/66 (2013.01) [H01L 23/4824 (2013.01); H01L 24/09 (2013.01); H01L 24/49 (2013.01); H01L 29/42356 (2013.01); H01L 2223/6611 (2013.01)] | 20 Claims |
1. A transistor device, comprising:
a first unit cell transistor comprising a gate contact and a drain contact extending in a first direction;
a first electrically conductive element electrically connected to the gate contact;
a second electrically conductive element electrically connected to the drain contact;
an isolation material extending on the first unit cell transistor in a second direction that crosses the first direction, wherein the isolation material is configured to reduce a coupling between the first electrically conductive element and the second electrically conductive element; and
an isolation structure between the first unit cell transistor and a second unit cell transistor,
wherein the isolation material is electrically connected to the isolation structure.
|