US 11,742,216 B2
System and method for laser assisted bonding of an electronic device
Tae Ho Yoon, Daejeon (KR); Yang Gyoo Jung, Seoul (KR); Min Ho Kim, Seoul (KR); Youn Seok Song, Gwangju (KR); Dong Soo Ryu, Seongnam-si (KR); and Choong Hoe Kim, Seoul (KR)
Assigned to Amkor Technology Singapore Holding Pte. Ltd., Singapore (SG)
Filed by Amkor Technology Singapore Holding Pte. Ltd., Singapore (SG)
Filed on Aug. 27, 2020, as Appl. No. 17/5,021.
Application 17/005,021 is a continuation of application No. 16/424,093, filed on May 28, 2019, granted, now 10,763,129.
Application 16/424,093 is a continuation of application No. 15/919,569, filed on Mar. 13, 2018, granted, now 10,304,698, issued on May 28, 2019.
Application 15/919,569 is a continuation of application No. 15/130,637, filed on Apr. 15, 2016, granted, now 9,916,989, issued on Mar. 13, 2018.
Prior Publication US 2021/0082717 A1, Mar. 18, 2021
Int. Cl. H01L 21/48 (2006.01); H01L 23/00 (2006.01); G02B 27/09 (2006.01); H01L 23/31 (2006.01); H01L 25/065 (2023.01); H01L 25/00 (2006.01); H01L 21/60 (2006.01)
CPC H01L 21/4853 (2013.01) [G02B 27/0927 (2013.01); H01L 24/75 (2013.01); H01L 24/81 (2013.01); H01L 23/3128 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2021/60112 (2013.01); H01L 2224/131 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/75263 (2013.01); H01L 2224/81002 (2013.01); H01L 2224/81007 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81224 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/92125 (2013.01); H01L 2225/06513 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/3511 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
positioning a semiconductor die on a substrate; and
irradiating the semiconductor die with a laser beam to reflow interconnection structures between the semiconductor die and the substrate,
wherein said irradiating the semiconductor die comprises:
during a first time period, laser-irradiating a first area of the semiconductor die utilizing a first amount of laser energy; and
during a second time period, laser-irradiating a second area of the semiconductor die utilizing a second amount of laser energy,
where the second area is different from the first area, and
where the second amount of laser energy is different from the first amount of laser energy.