US 11,742,212 B2
Directional deposition in etch chamber
Zhongkui Tan, Fremont, CA (US); Lisi Xie, Fremont, CA (US); Yoko Yamaguchi, Union City, CA (US); Yasushi Ishikawa, Fremont, CA (US); Patrick Ponath, San Jose, CA (US); Sung Jin Jung, Pleasanton, CA (US); Sangjun Park, Fremont, CA (US); Wonchul Lee, Pleasanton, CA (US); and Jayoung Choi, San Jose, CA (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Appl. No. 17/309,188
Filed by Lam Research Corporation, Fremont, CA (US)
PCT Filed Oct. 29, 2019, PCT No. PCT/US2019/058631
§ 371(c)(1), (2) Date May 4, 2021,
PCT Pub. No. WO2020/096817, PCT Pub. Date May 14, 2020.
Claims priority of provisional application 62/755,846, filed on Nov. 5, 2018.
Prior Publication US 2022/0028697 A1, Jan. 27, 2022
Int. Cl. H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01)
CPC H01L 21/31144 (2013.01) [H01J 37/32449 (2013.01); H01J 37/32724 (2013.01); H01L 21/0276 (2013.01); H01L 21/02274 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method comprising:
providing a semiconductor substrate comprising a carbon-containing target layer, an anti-reflective layer, and a patterned photoresist;
patterning the anti-reflective layer to form a patterned anti-reflective mask;
exposing the semiconductor substrate to a tungsten-containing precursor and igniting a plasma under conditions to selectively deposit a tungsten-containing mask to form a patterned tungsten-containing mask on field regions of the patterned anti-reflective mask; and
patterning the carbon-containing target layer using the patterned anti-reflective mask and patterned tungsten-containing mask.