US 11,740,226 B2
Designs and fabrication of nanogap sensors
Christophe Antoine, London (GB); Himanshu Jain, Norwood, MA (US); Matthew Thomas Canty, Nenagh (IE); Christina B. McLoughlin, Crecora (IE); Daniel Joseph Lucey, Limerick (IE); Sinead Maire McDermott, Oughterard (IE); Stephen O'Brien, Clarina (IE); Bernard Stenson, Limerick (IE); Shane Geary, Sixmilebridge (IE); William Allan Lane, Waterfall (IE); Michael Coln, Lexington, MA (US); and Mark De Leon Alea, Manila (PH)
Assigned to ANALOG DEVICES INTERNATIONAL UNLIMITED COMPANY, Limerick (IE)
Appl. No. 16/651,832
Filed by Analog Devices International Unlimited Company, Limerick (IE)
PCT Filed Oct. 8, 2018, PCT No. PCT/EP2018/077272
§ 371(c)(1), (2) Date Mar. 27, 2020,
PCT Pub. No. WO2019/072743, PCT Pub. Date Apr. 18, 2019.
Claims priority of provisional application 62/571,921, filed on Oct. 13, 2017.
Prior Publication US 2020/0256842 A1, Aug. 13, 2020
Int. Cl. G01N 33/487 (2006.01)
CPC G01N 33/48721 (2013.01) 18 Claims
OG exemplary drawing
 
1. A transducer device for analyzing one or more fluid analytes, the transducer device comprising:
a nanogap sensor over a substrate, the nanogap sensor including a first electrode having a planar shape and a second electrode, the second electrode opposite the first electrode and separated from the first electrode by a nanogap for receiving a liquid analyte, wherein each of the first electrode and the second electrode is parallel to the substrate;
a first interconnect configured to provide electrical connectivity to the first electrode; and
a second interconnect configured to provide electrical connectivity to the second electrode,
wherein:
at least a portion of the second electrode forms a planar, fully-released cantilever suspended directly over at least a majority of the first electrode,
the planar shape of the first electrode and the planar shape of the fully-released cantilever are parallel to one another and function as a parallel plate capacitor;
the first interconnect is in a first layer over the substrate,
the nanogap sensor is in a second layer over the substrate, and
the second interconnect is in a third layer over the substrate, the second layer being between the first layer and the third layer, and the first layer being between the substrate and the second layer.