| US 7,583,250 B2 | ||
| Semiconductor device | ||
| Kiyoshi Kato, Sagamihara (Japan); and Toshihiko Saito, Atsugi (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (Japan) | ||
| Filed on Mar. 08, 2004, as Appl. No. 10/793,822. | ||
| Claims priority of application No. 2003-067275 (JP), filed on Mar. 12, 2003. | ||
| Prior Publication US 2004/0178434 A1, Sep. 16, 2004 | ||
| Int. Cl. G09G 3/36 (2006.01) | ||
| U.S. Cl. 345—104 [345/87; 345/92; 345/93; 345/95] | 64 Claims |
| 1. A semiconductor device comprising:
an insulating substrate;
a variable capacitor including a pair of electrodes and a dielectric, which is formed over the insulating substrate; and
a display device over the insulating substrate,
wherein a capacitance of the variable capacitor is changed corresponding to a distance between the pair of the electrodes,
and
wherein the semiconductor device includes a means for converting change of capacitance of the variable capacitor into an electrical
signal.
|