| US 7,582,970 B2 | ||
| Carbon containing silicon oxide film having high ashing tolerance and adhesion | ||
| Sadayuki Ohnishi, Kawasaki (Japan); Kouichi Owto, Kawasaki (Japan); Tatsuya Usami, Kawasaki (Japan); Noboru Morita, Kawasaki (Japan); Kouji Arita, Kawasaki (Japan); Ryouhei Kitao, Kawasaki (Japan); and Youichi Sasaki, Kawasaki (Japan) | ||
| Assigned to NEC Electronics Corporation, Kawasaki (Japan) | ||
| Filed on Jul. 28, 2008, as Appl. No. 12/180,652. | ||
| Application 12/180652 is a division of application No. 11/477011, filed on Jun. 28, 2006, granted, now 7,420,279. | ||
| Application 11/477011 is a division of application No. 10/767230, filed on Jan. 29, 2004, granted, now 7,102,236, filed on Sep. 05, 2006. | ||
| Claims priority of application No. 2003-021078 (JP), filed on Jan. 29, 2003; and application No. 2004-018080 (JP), filed on Jan. 27, 2004. | ||
| Prior Publication US 2008/0290522 A1, Nov. 27, 2008 | ||
| Int. Cl. H01L 23/48 (2006.01) | ||
| U.S. Cl. 257—758 [257/759; 257/760; 257/E21.261; 257/E21.277] | 7 Claims |
| 1. A semiconductor device comprising:
an interlayer insulating film formed on or over a semiconductor substrate,
an opening which is formed in the interlayer insulating film and which reaches a lower layer metal wiring conductor, and
a metal plug which is formed by filling the opening with Cu containing metal via a barrier metal,
wherein the interlayer insulating film includes the insulating film comprising a carbon containing silicon oxide (SiOCH) film
which has Si—CH2 bond in the carbon containing silicon oxide film, and
wherein the proportion of Si—CH2 bond (1360 cm-1) to Si—CH3 bond (1270 cm-1) in the insulating film is in a range from 0.03
to 0.05 measured as a peak height ratio of FTIR spectrum.
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