| US 7,582,940 B2 | ||
| Semiconductor device using MEMS technology | ||
| Tatsuya Ohguro, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Jan. 30, 2006, as Appl. No. 11/341,910. | ||
| Claims priority of application No. 2005-157523 (JP), filed on May 30, 2005. | ||
| Prior Publication US 2006/0267109 A1, Nov. 30, 2006 | ||
| Int. Cl. H01L 27/20 (2006.01); H01L 41/08 (2006.01) | ||
| U.S. Cl. 257—415 [257/417; 257/E27.006] | 20 Claims |
| 1. A semiconductor device using a MEMS technology, the semiconductor device comprising:
a cavity;
a lower electrode positioned below the cavity;
a moving part positioned in the cavity;
an upper electrode coupled with the moving part;
a first film which covers an upper portion of the cavity and has a first opening;
a material which closes the first opening and seals the cavity; and
a member positioned in the cavity and in substantially a same vertical level as the moving part and below the first film,
wherein a second opening is provided between the member and the moving part and is configured to allow movement of the moving
part as seen from above the cavity, and
wherein a position of the first opening does not overlap with a position of the second opening.
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