| US 7,582,921 B2 | ||
| Semiconductor device and method for patterning | ||
| Tomonori Sekiguchi, Tokyo (Japan); Toshihiko Tanaka, Tokyo (Japan); Toshiaki Yamanaka, Saitama (Japan); Takeshi Sakata, Tokyo (Japan); and Katsutaka Kimura, Tokyo (Japan) | ||
| Assigned to Hitachi, Ltd., Tokyo (Japan) | ||
| Filed on Aug. 16, 2006, as Appl. No. 11/504,738. | ||
| Application 11/504738 is a continuation of application No. 10/282044, filed on Oct. 29, 2002, granted, now 7,105,873. | ||
| Application 10/282044 is a continuation of application No. 09/342239, filed on Jun. 29, 1999, granted, now 6,495,870. | ||
| Claims priority of application No. 10-188518 (JP), filed on Jul. 03, 1998. | ||
| Prior Publication US 2006/0273405 A1, Dec. 07, 2006 | ||
| Int. Cl. H01L 27/10 (2006.01) | ||
| U.S. Cl. 257—202 [257/203; 257/208; 257/E27.105] | 8 Claims |
| 1. A semiconductor device comprising:
a first wiring extending in a first direction and coupled to a plurality of first memory cells;
a second wiring extending in the first direction and coupled to a plurality of second memory cells;
a third wiring extending in the first direction and coupled to a plurality of third memory cells;
a fourth wiring extending in the first direction and coupled to a plurality of fourth memory cells;
a first contact provided at one end of the first wiring;
a second contact provided at one end of the second wiring;
a third contact provided at one end of the third wiring; and
a fourth contact provided at one end of the fourth wiring,
wherein the plurality of first to fourth memory cells are formed in a first rectangular region,
wherein the first and fourth contacts are formed in a second region, wherein the second and third contacts are formed in a
third region,
wherein the first rectangular region is provided between the second region and the third region,
wherein a first side of the first rectangular region extends in a second direction perpendicular to the first direction, and
wherein a distance between the other end of the second wiring and the first side of the first rectangular region is shorter
than a distance between the other end of the third wiring and the first side of the first rectangular region.
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