| US 7,582,908 B2 | ||
| Nitride semiconductor device and manufacturing method thereof | ||
| Kyozo Kanamoto, Tokyo (Japan); Katsuomi Shiozawa, Tokyo (Japan); Kazushige Kawasaki, Tokyo (Japan); Hitoshi Sakuma, Tokyo (Japan); and Yoshiyuki Suehiro, Tokyo (Japan) | ||
| Assigned to Mitsubishi Electric Corporation, Tokyo (Japan) | ||
| Filed on Mar. 26, 2007, as Appl. No. 11/691,049. | ||
| Claims priority of application No. 2006-093399 (JP), filed on Mar. 30, 2006. | ||
| Prior Publication US 2007/0231978 A1, Oct. 04, 2007 | ||
| Int. Cl. H01L 29/26 (2006.01) | ||
| U.S. Cl. 257—80 [438/22] | 17 Claims |
| 1. A nitride semiconductor device comprising:
a nitride semiconductor substrate;
a layered-structure of a nitride semiconductor element that is provided on a first main surface side of said nitride semiconductor
substrate;
a metal electrode provided on a second main surface side of said nitride semiconductor substrate; and
a surface denatured layer that contains Si and is provided between said nitride semiconductor substrate and said metal electrode,
said surface denatured layer being formed by denaturing the second main surface of said nitride semiconductor substrate by
causing the second main surface to react with a first material that contains Si.
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