US 7,582,891 B2
Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon
John Kouvetakis, Mesa, Ariz. (US); Jose Menendez, Tempe, Ariz. (US); John Tolle, Gilbert, Ariz. (US); Ling Liao, Santa Clara, Calif. (US); and Dean Samara-Rubio, San Jose, Calif. (US)
Assigned to Arizona Board of Regents, A Corporate Body Organized Under Arizona Law, Acting on Behalf of Arizona State University,
Appl. No. 11/663,024
PCT Filed Sep. 16, 2005, PCT No. PCT/US2005/033148
§ 371(c)(1), (2), (4) Date Dec. 03, 2007,
PCT Pub. No. WO2006/034025, PCT Pub. Date Mar. 30, 2006.
Claims priority of provisional application 60/611036, filed on Sep. 16, 2004.
Prior Publication US 2008/0277647 A1, Nov. 13, 2008
Int. Cl. H01L 29/739 (2006.01)
U.S. Cl. 257—14  [257/18; 257/19; 257/9; 257/E33.016] 5 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising: a single quantum well Ge1-x1-ySix1Sny/Ge1-x2Six2 heterostructure grown strain-free on Si(100) via a Sn1-xGex buffer layer.