US 7,582,883 B2
Method of scanning a substrate in an ion implanter
Geoffrey Ryding, Manchester, Mass. (US); Takao Sakase, Rowley, Mass. (US); Marvin Farley, Ipswich, Mass. (US); and Theodore H. Smick, Essex, Mass. (US)
Assigned to Applied Materials, Inc., Santa Clara, Calif. (US)
Filed on Jan. 12, 2007, as Appl. No. 11/652,645.
Prior Publication US 2008/0169434 A1, Jul. 17, 2008
Int. Cl. G21K 5/10 (2006.01)
U.S. Cl. 250—492.21  [250/492.1; 250/492.2; 250/492.22; 250/492.3] 19 Claims
OG exemplary drawing
 
1. A method of scanning a substrate through an ion beam in an ion implanter, comprising:
causing relative motion between the substrate and the ion beam; and
rotating the substrate substantially about its centre while causing the relative motion, such that the ion beam would pass over all of the substrate even if the substrate were not rotating, the relative motion between the substrate and the ion beam being at a constant speed.