| US 7,582,561 B2 | ||
| Method of selectively depositing materials on a substrate using a supercritical fluid | ||
| Chien M. Wai, Moscow, Id. (US); Hiroyuki Ohde, Hiroshima (Japan); and Steve Kramer, Boise, Id. (US) | ||
| Assigned to Micron Technology, Inc., Boise, Id. (US); and Idaho Research Foundation, Inc., Moscow, Id. (US) | ||
| Filed on Sep. 01, 2005, as Appl. No. 11/218,347. | ||
| Prior Publication US 2007/0049019 A1, Mar. 01, 2007 | ||
| Int. Cl. H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—672 [438/669; 438/778; 257/642; 257/E21.597] | 33 Claims |
| 1. A method for depositing one or more materials on a substrate comprising:
providing a semiconductor substrate; said substrate including at least one trench or contact hole;
applying a polymer film to at least a portion of a surface of said substrate;
exposing said semiconductor substrate to a supercritical fluid containing at least one reactant for a time sufficient for
said supercritical fluid to swell said polymer and for said at least one reactant to penetrate said polymer film;
reacting said at least one reactant to deposit a material on at least a portion of said substrate; wherein said material is
deposited in said trench or contact hole;
removing said substrate from said supercritical fluid; and
removing said polymer film.
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