| US 7,582,489 B2 | ||
| Method for manufacturing magnetic sensor apparatus | ||
| Kenichi Ao, Tokai (Japan); Yasutoshi Suzuki, Okazaki (Japan); Hideya Yamadera, Nagoya (Japan); Norikazu Ohta, Aichi-gun (Japan); and Hirofumi Funahashi, Nagoya (Japan) | ||
| Assigned to DENSO CORPORATION, Kariya (Japan) | ||
| Filed on Feb. 14, 2008, as Appl. No. 12/68,988. | ||
| Application 12/068988 is a division of application No. 10/717902, filed on Nov. 21, 2003, granted, now 7,417,269. | ||
| Claims priority of application No. 2002-337416 (JP), filed on Nov. 21, 2002; application No. 2002-337417 (JP), filed on Nov. 21, 2002; application No. 2003-058899 (JP), filed on Mar. 05, 2003; application No. 2003-058900 (JP), filed on Mar. 05, 2003; and application No. 2003-073900 (JP), filed on Mar. 18, 2003. | ||
| Prior Publication US 2008/0145956 A1, Jun. 19, 2008 | ||
| Int. Cl. H01L 21/00 (2006.01); G01B 7/30 (2006.01) | ||
| U.S. Cl. 438—3 [257/E21.001; 324/207.25] | 2 Claims |
| 1. A method for manufacturing a magnetic sensor apparatus that includes a semiconductor substrate field, wherein the magnetic
impedance device is disposed on the substrate, the method comprising:
forming a stress relaxation layer on the substrate;
forming a magnetic impedance device for detecting a magnetic field on the stress relaxation layer; and
forming an oxidation protection film on the magnetic impedance device, wherein
the stress relaxation layer reduces a stress generated in the substrate in a case where the substrate and the magnetic impedance
device are processed in a heat treatment, and
the oxidation protection film is made of silicon oxides, silicon nitrides, or a composite film of silicon oxides and silicon
nitrides.
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