| US 7,580,435 B2 | ||
| Laser diode, optical pickup device, optical disk apparatus, and optical communications equipment | ||
| Kanji Takeuchi, Tokyo (Japan); and Kenji Sahara, Kanagawa (Japan) | ||
| Assigned to Sony Corporation, Tokyo (Japan) | ||
| Filed on Mar. 23, 2005, as Appl. No. 11/87,797. | ||
| Application 11/087797 is a continuation of application No. 10/187480, filed on Jul. 02, 2002, granted, now 6,879,613. | ||
| Claims priority of application No. 2001-205306 (JP), filed on Jul. 05, 2001. | ||
| Prior Publication US 2005/0163180 A1, Jul. 28, 2005 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01S 5/00 (2006.01) | ||
| U.S. Cl. 372—43.01 [372/50.1; 372/45.01; 372/54; 372/92] | 9 Claims |
| 1. A laser diode comprising:
a first cladding layer of a first conductive type formed on a substrate;
an active layer formed on said first cladding layer;
a second cladding layer of a second conductive type formed over a top layer of said active layer, said second cladding layer
having a ridge shape in cross section;
a first optical guide layer within said first cladding layer; and
a second optical guide layer within said second cladding layer,
wherein,
said first and second optical guide layers each have a higher refractive index than those of said first cladding layer and
said second cladding layer, respectively,
said first and second optical guide layers broaden a beam waist in a waveguide,
said first and second optical guide layers are sandwiched between portions of said first cladding layer and said second cladding
layer, respectively, and
the active layer includes a quantum well structure, a barrier layer and SCH optical guide layer.
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