| US 7,580,280 B2 | ||
| Method and apparatus for a non-volatile memory device with reduced program disturb | ||
| Chung-Kuang Chen, Pan Chiao (Taiwan) | ||
| Assigned to Macronix International Co., Ltd., (Taiwan) | ||
| Filed on Sep. 27, 2007, as Appl. No. 11/862,903. | ||
| Application 11/862903 is a division of application No. 11/370368, filed on Mar. 08, 2006, granted, now 7,313,018. | ||
| Prior Publication US 2008/0055980 A1, Mar. 06, 2008 | ||
| Int. Cl. G11C 16/24 (2006.01) | ||
| U.S. Cl. 365—185.02 [365/185.18; 365/185.25] | 18 Claims |
| 10. A method for reducing program disturb of a target memory cell in a memory cell array, comprising:
supplying a program voltage to a drain node of the target memory cell;
supplying a plurality of different initial shielding voltages to neighboring source/drain nodes in the memory cell array;
supplying a low voltage to a source node of the target memory cell; and
supplying a high voltage to a gate node of the target memory cell,
wherein the program voltage and each of the plurality of initial shielding voltages are non-zero voltages.
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