| US 7,580,088 B2 | ||
| Contact for semiconductor and display devices | ||
| Jang-Soo Kim, Suwon (Korea, Republic of); Hyang-Shik Kong, Suwon (Korea, Republic of); Min-Wook Park, Ponghang (Korea, Republic of); and Sang-Jin Jeon, Seoul (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do (Korea, Republic of) | ||
| Filed on Sep. 12, 2007, as Appl. No. 11/854,059. | ||
| Application 11/854059 is a division of application No. 10/273073, filed on Oct. 17, 2002, granted, now 7,271,867. | ||
| Claims priority of application No. 2001-0065185 (KR), filed on Oct. 22, 2001. | ||
| Prior Publication US 2007/0296885 A1, Dec. 27, 2007 | ||
| Int. Cl. G02F 1/136 (2006.01); H01L 21/4763 (2006.01) | ||
| U.S. Cl. 349—43 [438/624] | 16 Claims |
| 1. A method of fabricating a semiconductor device, the method comprising the steps of:
forming a first wiring line assembly on a substrate;
forming an under-layer on the first wiring line assembly;
forming an organic insulating layer such that the organic insulating layer covers the under-layer;
patterning the organic insulating layer to thereby form contact holes exposing the under-layer;
etching the under-layer exposed through the contact holes such that the underlying first wiring line assembly is exposed to
the outside;
curing the organic insulating layer after etching the under-layer; and
forming a second wiring line assembly on the organic insulating layer such that the second wiring line assembly is connected
to the first wiring line assembly through the contact holes.
|