| US 7,579,805 B2 | ||
| Semiconductor device | ||
| Atsushi Saito, Takasaki (Japan); Katsuhiro Higuchi, Hitachinaka (Japan); Osamu Otsuka, Atsugi (Japan); Hidekazu Nishidai, Isesaki (Japan); Hiroshi Houzouji, Hitachiohta (Japan); Toshiaki Morita, Hitachi (Japan); Yoshimasa Takahashi, Kyoto (Japan); and Toshiya Sato, Hitachiohta (Japan) | ||
| Assigned to Hitachi, Ltd., Tokyo (Japan) | ||
| Appl. No. 10/587,283 PCT Filed Jan. 26, 2004, PCT No. PCT/JP2004/000658 § 371(c)(1), (2), (4) Date May 18, 2007, PCT Pub. No. WO2005/071824, PCT Pub. Date Aug. 04, 2005. |
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| Prior Publication US 2007/0215316 A1, Sep. 20, 2007 | ||
| Int. Cl. H02P 27/04 (2006.01) | ||
| U.S. Cl. 318—800 [318/767; 318/798; 318/799; 62/259.2] | 10 Claims |
| 1. A semiconductor device including a cooling system for controlling temperature of a refrigerant through a heating section
and a radiator, said semiconductor device being connected to and cooled by said cooling system,
wherein a variation width (ΔT1) of temperature controlled by said cooling system through said heating section and said radiator is smaller than a temperature
variation (ΔT2) of the refrigerant caused by variations in operating conditions of said semiconductor device (ΔT1<ΔT2); and
further comprising suppression means provided to cover an outer periphery of said semiconductor device and suppressing transmission
of heat from an ambient atmosphere to said semiconductor device.
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