US 7,579,759 B2
Surface acoustic wave (SAW) devices based on cubic boron nitride/diamond composite structures
Shuit-Tong Lee, Hong Kong (Hong Kong Special Administrative Region of the People's Republic of China, The); Wen-Jun Zhang, Hong Kong (Hong Kong Special Administrative Region of the People's Republic of China, The); You-Sheng Zou, Hong Kong (China); Igor Bello, Hong Kong (Hong Kong Special Administrative Region of the People's Republic of China, The); Kwok Leung Ma, Hong Kong (Hong Kong Special Administrative Region of the People's Republic of China, The); Kar Man Leung, Hong Kong (Hong Kong Special Administrative Region of the People's Republic of China, The); and Yat Ming Chong, Hong Kong (Hong Kong Special Administrative Region of the People's Republic of China, The)
Assigned to City University of Hong Kong, Hong Kong (China)
Filed on Jun. 11, 2007, as Appl. No. 11/760,996.
Prior Publication US 2008/0303378 A1, Dec. 11, 2008
Int. Cl. H01L 41/09 (2006.01)
U.S. Cl. 310—358  [310/313 R] 14 Claims
OG exemplary drawing
 
1. A high frequency surface acoustic wave device comprising:
a) a diamond hard layer;
b) a cubic boron nitride (cBN) piezoelectric layer formed on said diamond hard layer, wherein said cBN piezoelectric layer is adapted to propagate a surface acoustic wave; and
c) a pair of interdigital transducer electrodes (IDT) formed on said cBN piezoelectric layer which are adapted to perform conversion between an electrical signal and a surface acoustic wave.