| US 7,579,696 B2 | ||
| Semiconductor device | ||
| Sachiyo Ito, Kanagawa (Japan); and Masahiko Hasunuma, Kanagawa (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Jun. 19, 2008, as Appl. No. 12/142,312. | ||
| Claims priority of application No. 2007-184955 (JP), filed on Jul. 13, 2007. | ||
| Prior Publication US 2009/0014882 A1, Jan. 15, 2009 | ||
| Int. Cl. H01L 23/48 (2006.01); H01L 23/52 (2006.01) | ||
| U.S. Cl. 257—784 [257/758; 257/762; 257/766; 257/773] | 20 Claims |
| 1. A semiconductor device, comprising:
an effective wire formed above a substrate in a multilayer interconnection structure and having a first electrode pad in a
top layer;
a first reinforcing material formed in the multilayer interconnection structure like surrounding the effective wire;
a protective film configured to protect a final surface of the multilayer interconnection structure; and
a second reinforcing material formed at a position in contact with the protective film and also between an area in which the
effective wire is formed and a chip area end, the second reinforcing material being constituted by a film pattern whose Young's
modulus is larger than that of a conductor constituting the first electrode pad and that of a conductor constituting the first
reinforcing material.
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