| US 7,579,694 B2 | ||
| Electronic devices including offset conductive bumps | ||
| Jong-Rong Jan, Hualian Hsien (Taiwan); Tsai-Hua Lu, Hisn-Chu (Taiwan); Sao-Ling Chiu, Hisn-Chu (Taiwan); and Ling-Chen Kung, Hisn-Chu (Taiwan) | ||
| Assigned to Unitive International Limited, Curacao (Netherlands Antilles) | ||
| Filed on Jun. 02, 2006, as Appl. No. 11/446,341. | ||
| Application 11/446341 is a division of application No. 10/780529, filed on Feb. 17, 2004, granted, now 7,081,404. | ||
| Claims priority of provisional application 60/448096, filed on Feb. 18, 2003. | ||
| Prior Publication US 2006/0231951 A1, Oct. 19, 2006 | ||
| Int. Cl. H01L 23/48 (2006.01) | ||
| U.S. Cl. 257—778 [257/780; 257/E27.137] | 19 Claims |
| 1. An electronic device comprising:
a first substrate including a metal layer comprising aluminum on the first substrate;
a barrier layer on the first substrate offset from the metal layer comprising aluminum;
a conductive bump on the barrier layer wherein the barrier layer is between the conductive bump and the first substrate, wherein
the conductive bump is offset from the metal layer comprising aluminum, and wherein the barrier layer, the conductive bump,
and the metal layer comprising aluminum all comprise different conductive materials;
a second substrate bonded to the conductive bump so that the conductive bump is between the first and second substrates; and
a wirebond on the metal layer comprising aluminum wherein the metal layer comprising aluminum is free of the conductive material
of the barrier layer thereon;
wherein the conductive bump comprises at least one of solder, gold, and/or copper, wherein the barrier layer comprises titanium
tungsten, and wherein the metal layer comprising aluminum is free of titanium tungsten thereon so that a portion of the first
substrate is free of titanium tungsten between the substrate and the wirebond.
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