| US 7,579,669 B2 | ||
| Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof | ||
| Kazutoshi Nakamura, Yokohama (Japan); Norio Yasuhara, Kawasaki (Japan); Tomoko Matsudai, Tokyo (Japan); Kenichi Matsushita, Tokyo (Japan); and Akio Nakagawa, Fujisawa (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Oct. 16, 2006, as Appl. No. 11/549,297. | ||
| Application 11/549297 is a continuation of application No. 11/007254, filed on Dec. 09, 2004, granted, now 7,138,698. | ||
| Claims priority of application No. 2003-420771 (JP), filed on Dec. 18, 2003. | ||
| Prior Publication US 2007/0063307 A1, Mar. 22, 2007 | ||
| Int. Cl. H01L 27/00 (2006.01) | ||
| U.S. Cl. 257—499 [257/330; 257/368; 257/E27.014; 257/E29.027; 257/357] | 6 Claims |
| 1. A semiconductor device comprising:
a high side switching element formed on a first semiconductor substrate;
a high side driver circuit formed on the first semiconductor substrate in a monolithic manner with the high side switching
element and driving the high side switching element;
a low side switching element formed on a second semiconductor substrate separate from the first semiconductor substrate; and
a low side driver circuit formed on the first semiconductor substrate in a monolithic manner with the high side driver circuit
and driving the low side switching element.
|