| US 7,579,650 B2 | ||
| Termination design for deep source electrode MOSFET | ||
| Jianjun Cao, Torrance, Calif. (US); and Timothy Henson, Torrance, Calif. (US) | ||
| Assigned to International Rectifier Corporation, El Segundo, Calif. (US) | ||
| Filed on Aug. 08, 2007, as Appl. No. 11/890,849. | ||
| Claims priority of provisional application 60/836639, filed on Aug. 09, 2006. | ||
| Prior Publication US 2008/0035993 A1, Feb. 14, 2008 | ||
| Int. Cl. H01L 29/78 (2006.01) | ||
| U.S. Cl. 257—333 [257/E29.257; 257/E21.418; 438/270; 438/268] | 6 Claims |
| 1. A power semiconductor device comprising:
an active region, said active region including a plurality of source trenches extending into a semiconductor body of one conductivity,
a source contact, and a source electrode insulated from said semiconductor body by a thick insulation layer disposed inside
each said source trench and electrically connected to said source contact;
a termination region adjacent said active region, said termination region including at least one termination trench which
extends to the same depth as said source trenches, and a termination electrode disposed at least inside said termination trench;
and
another termination trench that extends to the same depth as said source trenches, wherein said termination electrode is disposed
inside said another termination trench.
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