| US 7,579,646 B2 | ||
| Flash memory with deep quantum well and high-K dielectric | ||
| Ming-Tsong Wang, Taipei (Taiwan); Tong-Chern Ong, Taipei (Taiwan); Albert Chin, Hsinchu (Taiwan); and Chun-Hung Lai, Kaohsiung (Taiwan) | ||
| Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (Taiwan) | ||
| Filed on May 25, 2006, as Appl. No. 11/440,667. | ||
| Prior Publication US 2007/0272916 A1, Nov. 29, 2007 | ||
| Int. Cl. H01L 29/08 (2006.01) | ||
| U.S. Cl. 257—314 [257/24; 257/25] | 13 Claims |
| 1. A semiconductor device comprising:
a tunneling layer over a substrate;
a storage layer having a conduction band lower than a conduction band of silicon over the tunneling layer with the semiconductor
device being at an un-powered state, wherein the storage layer is formed of a dielectric material and comprises AlGaN;
a blocking layer over the storage layer; and
a gate electrode over the blocking layer.
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