| US 7,579,643 B2 | ||
| Capacitor having high electrostatic capacity, integrated circuit device including the capacitor and method of fabricating the same | ||
| Byung-jun Oh, Suwon-si (Korea, Republic of); Kyung-tae Lee, Seoul (Korea, Republic of); and Yoon-hae Kim, Seongnam-si (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (Korea, Republic of) | ||
| Filed on Feb. 16, 2007, as Appl. No. 11/706,972. | ||
| Claims priority of application No. 10-2006-0018423 (KR), filed on Feb. 24, 2006. | ||
| Prior Publication US 2007/0200159 A1, Aug. 30, 2007 | ||
| Int. Cl. H01L 27/108 (2006.01); H01L 29/94 (2006.01) | ||
| U.S. Cl. 257—306 [257/307; 257/308; 257/309; 257/303; 257/296; 438/253; 438/239; 438/396; 438/381; 438/240] | 26 Claims |
| 1. A capacitor comprising:
a first electrode including at least one first electrode branch;
a second electrode facing the first electrode and including at least one second electrode branch;
a low dielectric layer formed between the first electrode branch and the second electrode branch; and
a high dielectric layer formed between the first electrode branch and the second electrode branch, the high dielectric layer
having a higher dielectric constant than the low dielectric layer.
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