| US 7,579,627 B2 | ||
| Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus | ||
| Yoshihiro Ueta, Yamatokoriyama (Japan); Teruyoshi Takakura, Tenri (Japan); Takeshi Kamikawa, Mihara (Japan); Yuhzoh Tsuda, Sakurai (Japan); Shigetoshi Ito, Shijonawate (Japan); Takayuki Yuasa, Ikoma-Gun (Japan); Mototaka Taneya, Nara (Japan); and Kensaku Motoki, Mino (Japan) | ||
| Assigned to Sharp Kabushiki Kaisha, Osaka (Japan); and Sumitomo Electric Industries, Ltd., Osaka (Japan) | ||
| Filed on May 18, 2006, as Appl. No. 11/435,932. | ||
| Application 11/435932 is a division of application No. 10/831659, filed on Apr. 26, 2004. | ||
| Claims priority of application No. 2003-284745 (JP), filed on Jan. 08, 2003; and application No. 2003-119334 (JP), filed on Apr. 24, 2003. | ||
| Prior Publication US 2006/0202188 A1, Sep. 14, 2006 | ||
| Int. Cl. H01L 31/12 (2006.01) | ||
| U.S. Cl. 257—79 [257/E33.001; 438/36; 438/42; 438/46; 438/47] | 17 Claims |
| 1. A nitride semiconductor laser device comprising a nitride semiconductor substrate and a plurality of nitride semiconductor
layers laid on top thereof,
wherein the nitride semiconductor layers include
an active layer having a quantum well structure by being composed of one or more well layers and one or more barrier layers,
and
an acceptor doping layer,
wherein the nitride semiconductor substrate includes, as a part thereof, a dislocation-concentrated region and, as all the
remaining part thereof, a low-dislocation region, and
wherein the nitride semiconductor layers laid immediately above the dislocation-concentrated region and the low-dislocation
region have a depression immediately above the dislocation-concentrated region.
|