US 7,579,619 B2
N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
Deepak Shukla, Webster, N.Y. (US); Shelby F. Nelson, Pittsford, N.Y. (US); and Diane C. Freeman, Pittsford, N.Y. (US)
Assigned to Eastman Kodak Company, Rochester, N.Y. (US)
Filed on Apr. 20, 2005, as Appl. No. 11/110,076.
Prior Publication US 2006/0237712 A1, Oct. 26, 2006
Int. Cl. H01L 35/24 (2006.01)
U.S. Cl. 257—40  [257/E51.005; 257/E51.006; 257/E51.05] 11 Claims
OG exemplary drawing
 
1. An article comprising, in a thin film transistor, a thin film of organic semiconductor material that comprises an N,N′-di(arylalkyl)-substituted naphthalene tetracarboxylic diimide compound having a substituted or unsubstituted carbocyclic aromatic ring system attached to each imide nitrogen atom through a divalent hydrocarbon group, wherein substituents, if any, on each carbocyclic aromatic ring system are independently selected electron donating organic substituents, wherein said compound is represented by the following structure:

OG Complex Work Unit Drawing
wherein, X is a —CH2— or alkyl substituted —CH2— divalent group, m is 0, n is 2 or 3, and
wherein in said structure all of R1, R3, R4, R5, R6, R8, R9, and R10 are H, and at least one of R2 and R7 is an alkyl group.