| US 7,579,613 B2 | ||
| Thin film fuse phase change RAM and manufacturing method | ||
| Hsiang Lan Lung, Elmsford, N.Y. (US); and Shih-Hung Chen, Elmsford, N.Y. (US) | ||
| Assigned to Macronix International Co., Ltd., Hsinchu (Taiwan) | ||
| Filed on Dec. 19, 2007, as Appl. No. 11/959,708. | ||
| Application 11/959708 is a continuation of application No. 11/155067, filed on Jun. 17, 2005, granted, now 7,321,130. | ||
| Prior Publication US 2008/0105862 A1, May 08, 2008 | ||
| Int. Cl. H01L 29/02 (2006.01) | ||
| U.S. Cl. 257—2 [257/5; 257/E45.002] | 11 Claims |
| 1. A memory device, comprising:
a word line extending along a direction;
a first electrode having a top side having a first width;
a second electrode having a top side having a second width;
an insulating member between the first electrode and the second electrode, the insulating member having a thickness between
the first and second electrodes near the top side of the first electrode and the top side of the second electrode; and
a bridge across the insulating member, the bridge contacting the top sides of the first and second electrodes and defining
an inter-electrode path between the first and second electrodes across the insulating member, the inter-electrode path having
a path length defined by the thickness of the insulating member, wherein the bridge comprises memory material having at least
two solid phases, and the bridge has a third width along the direction, the third width being less than the first width and
less than the second width.
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