| US 7,579,612 B2 | ||
| Resistive memory device having enhanced resist ratio and method of manufacturing same | ||
| Denny Tang, Saratoga, Calif. (US); Tai-Bor Wu, Hsinchu (Taiwan); Wen-Yuan Chang, Taipei (Taiwan); and Tzyh-Cheang Lee, Hsinchu (Taiwan) | ||
| Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (Taiwan) | ||
| Filed on Apr. 25, 2007, as Appl. No. 11/739,942. | ||
| Prior Publication US 2008/0266931 A1, Oct. 30, 2008 | ||
| Int. Cl. H01L 47/00 (2006.01) | ||
| U.S. Cl. 257—2 [257/4; 257/E27.006; 257/E27.104] | 14 Claims |
| 1. A non-volatile resistive memory device, comprising:
a first electrode formed on a substrate;
a first buffer layer formed on the first electrode and having a crystalline structure with a first orientation;
a dielectric layer formed on the first buffer and having substantially the same crystalline structure with the first orientation
as the first buffer layer, wherein a resistive ratio of the dielectric layer formed on the first buffer layer is greater than
a resistive ratio of a device having the dielectric layer formed on the first electrode; and
a second electrode formed over the dielectric layer.
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