| US 7,579,602 B2 | ||
| Ion implantation with a collimator magnet and a neutral filter magnet | ||
| Victor M. Benveniste, Lyle, Wash. (US); Christopher W. Campbell, Newburyport, Mass. (US); and Frank Sinclair, Quincy, Mass. (US) | ||
| Assigned to Varian Semiconductor Equipment Associates, Inc., Gloucester, Mass. (US) | ||
| Filed on Dec. 22, 2006, as Appl. No. 11/615,317. | ||
| Prior Publication US 2008/0149845 A1, Jun. 26, 2008 | ||
| Int. Cl. H01J 37/147 (2006.01); H01J 37/317 (2006.01); H01J 1/50 (2006.01) | ||
| U.S. Cl. 250—396ML [250/492.21; 250/492.3; 250/396 R; 335/210] | 14 Claims |
| 1. An ion implanter, comprising:
a collimator magnet configured to shape an ion beam;
a first deceleration stage positioned downstream of the collimator magnet and configured to manipulate energy of the ion beam
shaped by the collimator magnet; and
a neutral filter magnet positioned downstream of the first deceleration stage and configured to filter neutral atoms from
the ion beam emerging from the first deceleration stage.
|