| US 7,579,309 B2 | ||
| Methods for characterizing defects on silicon surfaces and etching composition and treatment process therefor | ||
| Alexandra Abbadie, Le Versoud (France); Jochen Maehliss, Karlstein (Germany); and Bernd Kolbesen, Bad Homburg (Germany) | ||
| Assigned to S.O.I.Tec Silicon on Insulator Technologies, Bernin (France) | ||
| Filed on May 16, 2007, as Appl. No. 11/749,358. | ||
| Claims priority of application No. 06291711 (EP), filed on Oct. 31, 2006. | ||
| Prior Publication US 2008/0099718 A1, May 01, 2008 | ||
| Int. Cl. C11D 7/26 (2006.01); C11D 7/08 (2006.01); C11D 7/10 (2006.01); H01L 21/00 (2006.01); B08B 7/00 (2006.01) | ||
| U.S. Cl. 510—175 [510/176; 438/8; 438/494; 438/745; 438/752; 438/753; 438/689; 134/1.3; 134/41; 134/42] | 21 Claims |
| 1. An etching solution, comprising, in volume percent:
hydrofluoric acid in an amount of about 2 to 30%;
nitric acid in an amount of about 4 to 60%;
acetic acid in an amount of about 20 to 90%; and
a further etchant of an alkali bromide or an alkali bromate in an amount sufficient to enhance etching performance of the
solution.
|