| US 7,579,308 B2 | ||
| Compositions and processes for photoresist stripping and residue removal in wafer level packaging | ||
| Wai Mun Lee, Fremont, Calif. (US) | ||
| Assigned to EKC/DuPont Electronics Technologies, Hayward, Calif. (US) | ||
| Filed on May 02, 2005, as Appl. No. 11/120,054. | ||
| Application 10/007134 is a division of application No. 09/343532, filed on Jun. 30, 1999, granted, now 6,417,112. | ||
| Application 11/120054 is a continuation in part of application No. 10/689657, filed on Oct. 22, 2003, granted, now 7,135,445. | ||
| Application 10/689657 is a continuation in part of application No. 10/007134, filed on Dec. 04, 2001, granted, now 7,157,415. | ||
| Claims priority of provisional application 60/623190, filed on Oct. 29, 2004. | ||
| Claims priority of provisional application 60/092024, filed on Jul. 06, 1998. | ||
| Prior Publication US 2005/0263743 A1, Dec. 01, 2005 | ||
| Int. Cl. C11D 7/50 (2006.01) | ||
| U.S. Cl. 510—175 | 9 Claims |
| 1. A composition for removing a polymer, etch residue, ash residue, or a combination thereof from a substrate on which a circuit
or a portion of a circuit is present, which composition comprises:
an organic ammonium compound having the formula
 wherein:
X is hydroxide, sulfate, hydrogen sulfate, phosphate, hydrogen phosphate, dihydrogen phosphate, nitrate, a carboxylate, a
halide, carbonate, hydrogen carbonate, bifluoride, or a combination thereof,
R1 is an alkyl group or a group derived from the reaction of a tertiary amine with an organic epoxy, and
R2, R3, and R4 are each not hydrogen and are independently alkyl, benzyl, hydroxyalkyl, phenyl, a group derived from the reaction of a tertiary
amine with an organic epoxy, or another group contained in a tertiary amine;
more than about 2% by weight of an oxoammonium compound having the formula
 wherein:
X is hydroxide, sulfate, hydrogen sulfate, phosphate, hydrogen phosphate, dihydrogen phosphate, nitrate, a carboxylate, a
halide, carbonate, hydrogen carbonate, bifluoride, or a combination thereof,
each R5 is independently hydrogen, a substituted C1-C6 straight, branched, or cyclic alkyl, alkenyl, or alkynyl group, a substituted acyl group, straight or branched alkoxy group,
amidyl group, carboxyl group, alkoxyalkyl group, alkylamino group, alkylsulfonyl group, or sulfonic acid group, phenyl group,
substituted phenyl group, aryl group, substituted aryl group, or a salt or derivative thereof, and
each R6 and R7 is independently hydrogen, a hydroxyl group, a substituted C1-C6 straight, branched, or cyclic alkyl, alkenyl, or alkynyl group, a substituted acyl group, straight or branched alkoxy group,
amidyl group, carboxyl group, alkoxyalkyl group, alkylamino group, alkylsulfonyl group, or sulfonic acid group, phenyl group,
substituted phenyl group, aryl group, substituted aryl group, or a salt or derivative thereof;
an organic polar solvent that is miscible with water and water,
wherein the composition is capable of removing the polymer, the etch residue, the ash residue, or the combination thereof
from the substrate, while maintaining the operability of the circuit, or portion thereof, associated with the substrate,
wherein the pH of the composition is above about 9, and
wherein the organic ammonium compound is present in an amount from about 1% to about 30% by weight, the water is present in
an amount from about 15% to about 94% by weight, the organic polar solvent is present in an amount from about 25% to about
85% by weight, and the oxoammonium compound is present in an amount not more than about 10% by weight.
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