| US 7,579,287 B2 | ||
| Surface treatment method, manufacturing method of semiconductor device, and manufacturing method of capacitive element | ||
| Shigenori Ishihara, Moriya (Japan); and Nobuo Kawase, Yokohama (Japan) | ||
| Assigned to Canon Kabushiki Kaisha, Tokyo (Japan) | ||
| Filed on Aug. 09, 2006, as Appl. No. 11/501,005. | ||
| Claims priority of application No. 2005-235096 (JP), filed on Aug. 12, 2005; and application No. 2006-043967 (JP), filed on Feb. 21, 2006. | ||
| Prior Publication US 2007/0037413 A1, Feb. 15, 2007 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—795 [438/798; 257/E21.077] | 12 Claims |
| 1. A surface treatment method comprising:
a surface treatment step of exposing a surface of an object to plasma which is generated in an atmosphere containing at least
one selected from the group consisting of deuterium, deuterated hydrogen, and tritium, wherein the surface treatment step
is performed at a process pressure in the range of 50 Pa to 400 Pa; and
a nitridation step of nitriding the surface of the object by generating plasma in an atmosphere containing nitrogen after
the surface treatment step.
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