| US 7,579,286 B2 | ||
| Method of fabricating a semiconductor device using plasma to form an insulating film | ||
| Kiyotaka Tabuchi, Kanagawa (Japan) | ||
| Assigned to Sony Corporation, Tokyo (Japan) | ||
| Filed on Jun. 29, 2005, as Appl. No. 11/169,604. | ||
| Claims priority of application No. P2004-200179 (JP), filed on Jul. 07, 2004. | ||
| Prior Publication US 2006/0024979 A1, Feb. 02, 2006 | ||
| Int. Cl. H01L 21/469 (2006.01) | ||
| U.S. Cl. 438—788 [438/789; 257/E21.278] | 1 Claim |
| 1. A method of manufacturing a semiconductor device, the method comprising the steps of:
providing a substrate; and
forming an insulating film from a film-forming gas on the substrate by a plasma process in a chemical vapor deposition (CVD)
unit,
wherein,
(a) the plasma process comprises the step of forming a plasma of a film-forming gas, the film-forming gas comprising a compound
selected from the group consisting of tetraethoxy silane and tetra propoxy silane,
(b) the plasma is generated by repetitively switching a micro wave on and off set to a power set at about 1000 W and with
a duty ratio and an RF power of the CVD unit set to about 1000 W such that a ring structure of Si—O bonds is maintained in
the insulating film,
(c) the plasma process is such that the ring structure of the Si—O bonds is maintained in the insulating film, and
(d) a maximum of 30% of the Si—C bonds of the compound selected from the group consisting of tetraethoxy silane and tetra
propoxy silane are maintained in the insulating film.
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