| US 7,579,273 B2 | ||
| Method of manufacturing a photodiode array with through-wafer vias | ||
| Robin Wilson, Holywood (United Kingdom); Conor Brogan, Belfast (United Kingdom); Hugh J. Griffin, Newtownabbey (United Kingdom); and Cormac MacNamara, Belfast (United Kingdom) | ||
| Assigned to Icemos Technology Ltd., Belfast, Northern Ireland (United Kingdom) | ||
| Filed on Aug. 10, 2007, as Appl. No. 11/837,150. | ||
| Claims priority of provisional application 60/821993, filed on Aug. 10, 2006. | ||
| Prior Publication US 2008/0099870 A1, May 01, 2008 | ||
| Int. Cl. H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—668 [438/9; 438/700; 438/712; 257/E21.042; 257/E21.053; 257/E21.304; 257/E21.352; 257/E21.655; 257/E31.115] | 21 Claims |
| 1. A method for manufacturing a photodiode array comprising:
providing a semiconductor substrate having first and second main surfaces opposite to each other, the semiconductor substrate
having a first layer of a first conductivity proximate the first main surface and a second layer of a second conductivity
proximate the second main surface;
forming a via in the semiconductor substrate that extends to a first depth position relative to the first main surface, the
via having a first aspect ratio; and
generally simultaneously with forming the via, forming an isolation trench in the semiconductor substrate spaced apart from
the via that extends to a second depth position relative to the first main surface, the isolation trench having a second aspect
ratio different than the first aspect ratio.
|