	US 7,579,227 B2
	Semiconductor device and method for fabricating the same
Junji Hirase, Osaka (Japan); Akio Sebe, Osaka (Japan); Naoki Kotani, Hyogo (Japan); Gen Okazaki, Hyogo (Japan); Kazuhiko Aida, Chiba (Japan); and Shinji Takeoka, Osaka (Japan)
Assigned to Panasonic Corporation, Osaka (Japan)
Filed on Jul. 24, 2006, as Appl. No. 11/491,260.
Claims priority of application No. 2005-227457 (JP), filed on Aug. 05, 2005.
Prior Publication US 2007/0032007 A1, Feb. 08, 2007
Int. Cl. H01L 21/336 (2006.01); H01L 21/8234 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 27/108 (2006.01)

U.S. Cl. 438—197 [257/295; 257/310; 257/410]

15 Claims

1. A semiconductor device comprising:

a high dielectric constant gate insulating film formed on an active region in a substrate;

a gate electrode formed on the high dielectric constant gate insulating film; and

an insulating sidewall formed on each side surface of the gate electrode,

wherein the high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall,

at least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode,

the insulating sidewall includes a first insulating sidewall formed on a side surface of the gate electrode and a second insulating sidewall formed on the side surface of the gate electrode with the first insulating sidewall interposed therebetween,

the high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the first insulating sidewall, and

part of the high dielectric constant gate insulating film located under the first insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode.