| US 7,579,222 B2 | ||
| Manufacturing method of thin film device substrate | ||
| Mitsuru Nakata, Tokyo (Japan); Kazushige Takechi, Tokyo (Japan); and Hiroshi Kanoh, Tokyo (Japan) | ||
| Assigned to NEC Corporation, Tokyo (Japan) | ||
| Filed on Aug. 14, 2006, as Appl. No. 11/503,286. | ||
| Application 11/503286 is a continuation of application No. 10/974932, filed on Oct. 28, 2004, granted, now 7,122,444. | ||
| Claims priority of application No. 2003-370912 (JP), filed on Oct. 30, 2003. | ||
| Prior Publication US 2006/0276007 A1, Dec. 07, 2006 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—149 [438/151; 257/E21.102; 257/E21.123; 117/94] | 2 Claims |
| 1. A method of manufacturing a thin film device substrate, comprising, in order, the steps of:
forming on a first substrate, a peeling-off film made of a porous film;
forming a semiconductor film on said peeling-off film;
forming a thin film transistor with said semiconductor film as an active layer thereof;
bonding a second substrate onto said thin film device; and
peeling off said first substrate at said peeling-off film by driving a wedge into said peeling-off film to break said porous
film mechanically.
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