| US 7,579,211 B2 | ||
| Flip-chip semiconductor device utilizing an elongated tip bump | ||
| Rieka Ohuchi, Kanagawa (Japan) | ||
| Assigned to NEC Electronics Corporation, Kanagawa (Japan) | ||
| Filed on Aug. 22, 2005, as Appl. No. 11/207,787. | ||
| Application 11/207787 is a division of application No. 10/403036, filed on Apr. 01, 2003, granted, now 6,975,036. | ||
| Claims priority of application No. 2002-098699 (JP), filed on Apr. 01, 2002. | ||
| Prior Publication US 2006/0099737 A1, May 11, 2006 | ||
| Int. Cl. H01L 21/44 (2006.01); H01L 21/48 (2006.01); H01L 21/50 (2006.01) | ||
| U.S. Cl. 438—106 [438/108; 257/E21.007; 257/E21.324; 257/E21.329; 257/E21.499; 257/E21.511] | 18 Claims |
| 1. A manufacturing process for manufacturing a flip-chip type semiconductor device, which comprises steps of:
preparing a semiconductor chip having a plurality of sprout-shape metal bumps provided on a chip surface thereof;
preparing an adhesive resin sheet constituted from a film-like resin support element, and an adhesive resin layer formed on
said film-like resin support element and having a thickness less than a height of said sprout-shaped metal bumps; and
laminating said adhesive resin sheet on the chip surface of said semiconductor chip such that tip ends of said sprout-shaped
metal bumps penetrate through said adhesive resin layer, and engage with said film-like resin support element such that a
depression is formed in said film-like resin support element by the tip end of each sprout-shaped metal bump under a temperature
at which said adhesive resin layer is fluidified, and which is higher than a glass transition temperature of said film-like
resin support element, whereby a resin material forming said adhesive resin layer is introduced into said depression.
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