| US 7,578,890 B2 | ||
| Method for removing contaminants from silicon wafer surface | ||
| Yuling Liu, No. 8, Guangrong Dao, Hebei District, Tianjin 300130 (China); Xinhuan Niu, No. 8, Guangrong Dao, Hebei District, Tianjin 300130 (China); Shengli Wang, No. 8, Guangrong Dao, Hebei District, Tianjin 300130 (China); Juan Wang, No. 8, Guangrong Dao, Hebei District, Tianjin 300130 (China); Weiwei Li, No. 8, Guangrong Dao, Hebei District, Tianjin 300130 (China); and Zhenguo Ma, No. 8, Guangrong Dao, Hebei District, Tianjin 300130 (China) | ||
| Filed on May 24, 2007, as Appl. No. 11/753,219. | ||
| Claims priority of application No. 2006 1 0013981 (CN), filed on May 31, 2006. | ||
| Prior Publication US 2007/0277847 A1, Dec. 06, 2007 | ||
| Int. Cl. B08B 3/00 (2006.01); B08B 3/12 (2006.01); C25F 1/00 (2006.01); C25F 3/30 (2006.01) | ||
| U.S. Cl. 134—26 [134/1; 134/1.3; 134/2; 134/34] | 21 Claims |
| 1. A method of removal surface contaminants from silicon wafer surface comprising the following steps:
(a) submerging the silicon wafer surface in an aqueous cleaning agent solution through which current is passed using a boron-doped
diamond film as an electrode; then, removing the silicon wafer surface from the aqueous cleaning agent solution;
(b) then, submerging the silicon wafer surface in the aqueous cleaning agent solution; subjecting the silicon wafer to ultrasound
waves; and, optionally, heating the solution; then, removing the silicon wafer surface from the aqueous cleaning agent solution;
(c) then, submerging the silicon wafer surface in an electrolyte solution through which current is passed using a boron-doped
diamond film as an electrode; then, removing the silicon wafer surface from the electrolyte solution;
(d) then, submerging the silicon wafer surface in water with ultrasound and heating; then, removing the silicon wafer surface
from the water;
(e) then, repeating step (d); and
(f) then, spraying the silicon surface with water.
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